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photocoupler ps2732-1,ps2733-1 high collector to emitter voltage sop multi photocoupler ? nepoc series ? description t he ps2732-1 and ps2733-1 are optically coupled isolators containing a ga as light emitting diode and an npn silicon darlington-connect ed phototransistor. t h is package is sop (small outline package) ty pe and has shield effect to cut off ambient light. it is designed for high density mounting applications. features ? high isolation voltage (bv = 2 500 vr.m.s.) ? high collector to emitter voltage (v ce o = 300 v: ps2732-1) (v ce o = 350 v: ps2733-1) ? sop (small outline package) ty pe ? high current transfer ratio (ct r = 4 000 % t yp.) ? ordering number of taping product : ps2732-1-f 3 , f 4 , ps2733-1-f 3 , f 4 ? ul approved: f ile no. e72422 (s) ? vde0884 approved (option) applications ? hy brid ic ? t e lephone/t e legraph receiver ? fax ordering information (solder contains lead) part number package safety standard approval standard products ps2732-1, ps2733-1 4-pin sop ? ul approved ps2732-1-v, ps2733-1-v 4-pin sop vd e0884 approved products (option) ordering information (pb-free) part number package safety standard approval standard products ps2732-1-a, ps2733-1-a 4-pin sop ? ul approved PS2732-1-V-A, ps2733-1-v-a 4-pin sop vde0884 approved products (option) document no. pn10248ej01v0ds (1st edition) (prev i ous no. p11312ej3v0ds00) date published february 2003 cp(k) the mark ? show s major rev i sed points.
ps2732-1,ps2733-1 package dimensions (in millimeters) 4.00.5 7.00.3 4.4 0.50.3 0.15 +0.10 ?0.05 top view 1. anode 2. cathode 3. emitter 4. collector 43 12 2.0 0.10.1 2.10.2 2.54 0.4 +0.10 ?0.05 0.25 m ps2732-1 ps2733-1 data sheet pn10248ej01v0ds 2
ps2732-1,ps2733-1 absolute maximum ratings (t a = 25 c, unless otherw ise specified) p a r a m e t e r s y m b o l r a t i n g s u n i t p s 2 7 3 2 - 1 p s 2 7 3 3 - 1 diode forw ard current (dc) i f 5 0 m a r e v e r s e v o l t a g e v r 6 v pow e r dissipation derating ? p d / c 0 . 8 mw/ c p o w e r d i s s i p a t i o n p d 8 0 m w peak forw ard current *1 i fp 1 a transistor collector to emitter voltage v ceo 3 0 0 3 5 0 v emitter to collector voltage v eco 0 . 3 v c o l l e c t o r c u r r e n t i c 1 5 0 m a pow e r dissipation derating ? p c / c 1 . 5 mw/ c p o w e r d i s s i p a t i o n p c 1 5 0 m w isolation voltage *2 b v 2 5 0 0 v r . m . s . operating ambient temperature t a ?55 to +100 c storage temperature t st g ?55 to +150 c *1 pw = 100 s, duty cy cle = 1 % *2 ac voltage for 1 minute at t a = 25 c, rh = 60 % betw een input and output data sheet pn10248ej01v0ds 3
ps2732-1,ps2733-1 electrical characteristics (t a = 25 c) p a r a m e t e r s y m b o l c o n d i t i o n s m i n . ty p . m a x . u n i t d i o d e f o r w ard v o l t a g e v f i f = 10 ma 1.15 1.4 v r e v e r s e c u r r e n t i r v r = 5 v 5 a t e r m i n a l c a p a c i t a n c e c t v = 0 v, f = 1 mhz 30 pf transistor collector to emitter dark current i ceo i f = 0 ma, v ce = 300 v 400 na coupled current transfer ratio (i c /i f ) c t r i f = 1 ma, v ce = 2 v 1 500 4 000 % c o l l e c t o r s a t u r a t i o n voltage v ce (s at) i f = 1 ma, i c = 2 ma 1.0 v i s o l a t i o n r e s i s t a n c e r i-o v i-o = 1 kv dc 1 0 11 ? i s o l a t i o n c a p a c i t a n c e c i-o v = 0 v, f = 1 mhz 0.4 pf r i s e t i m e *1 t r v cc = 5 v, i c = 10 ma, r l = 100 ? 1 0 0 s f a l l ti m e *1 t f 1 0 0 *1 t e st circuit for sw itching time v cc v out r l = 100 ? i f 50 ? pulse input pw = 1 ms duty cycle = 1/10 data sheet pn10248ej01v0ds 4
ps2732-1,ps2733-1 typical characteristics (t a = 25 c, unless otherw ise specified) 100 50 25 0 75 25 50 75 100 ambient temperature t a (?c) diode power dissipation p d (mw) diode power dissipation vs. ambient temperature ambient temperature t a (?c) transistor power dissipation p c (mw) transistor power dissipation vs. ambient temperature collector to emitter voltage v ce (v) collector current i c (ma) collector current vs. collector to emitter voltage 100 0.1 1 0.01 10 0.6 1.0 1.4 1.6 0.8 1.2 forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage +25 ?c 0 ?c ?25 ?c ?55 ?c t a = +100 ?c +75 ?c +50 ?c ambient temperature t a (?c) collector to emitter dark current vs. ambient temperature collector to emitter dark current i ceo (na) collector saturation voltage v ce (sat) (v) collector current i c (ma) collector current vs. collector saturation voltage 200 150 100 50 0 25 50 75 100 0.1 ?50 v ce = 300 v 1 10 100 1 000 ?25 0 25 50 75 100 10 000 1.5 mw/?c 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1 000 100 10 1 0.1 01 2 34 5 160 140 120 100 80 60 40 20 1 ma i f = 5 ma 2 ma 1 ma 0.5 ma i f = 0.5 ma 1.5 ma 2 ma 2.5 ma 3.5 ma 3 ma 5 ma 4 ma 4.5 ma data sheet pn10248ej01v0ds 5
ps2732-1,ps2733-1 25 1.2 1.0 0.8 0.6 0.4 0.2 ?50 0 ?25 50 75 100 5 000 0 v ce = 2 v 0.1 300 20 v cc = 10 v, i c = 10 ma normalized to 1.0 at t a = 25 ?c, i f = 1 ma, v ce = 2 v 0.01 v ce = 4 v, i c = 10 ma, v in = 0.1 v p-p ?25 ?15 ?10 ?5 0 4 000 3 000 2 000 1 000 sample b sample a 0.5 1 5 10 20 100 50 10 1 5 50 100 500 1 k 2 k t r t d t f t s ?30 ?20 0.1 1 1 0 100 v in f 1 47 ? 1 k ? v out 100 ? 1 k ? 0 r l 1.2 1.0 0.8 0.6 0.4 0.2 0 10 10 2 10 3 10 4 10 5 10 6 i f = 1 ma t a = 25 ?c t a = 60 ?c forward current i f (ma) ambient temperature t a (?c) load resistance r l ( ? ) frequency f (khz) normalized current transfer ratio ctr current transfer ratio ctr (%) normalized gain g v switching time t ( s) normalized current transfer ratio vs. ambient temperature current transfer ratio vs. forward current switching time vs. load resistance frequency response long term ctr degradation time (hr) ctr (relative value) r l = 10 ? remark t he measurement of t ypical charact eris t i cs are only for reference, not guaranteed. data sheet pn10248ej01v0ds 6
ps2732-1,ps2733-1 taping specifications (in millimeters) tape direction outline and dimensions (reel) packing: 3 500 pcs/reel 2.00.5 r 1.0 13.00.2 21.00.8 3302.0 1001.0 2.0 0.5 11.9 to 15.4 outer edge of flange 17.51.0 13.51.0 13.00.2 ps2732-1-f3 ps2733-1-f3 ps2732-1-f4 ps2733-1-f4 1.550.1 2.00.05 4.00.1 1.750.1 4.60.1 2.9 max. 0.3 8.00.1 outline and dimensions (tape) 2.40.1 1.5 +0.1 ?0 7.40.1 5.50.05 12.00.2 data sheet pn10248ej01v0ds 7
ps2732-1,ps2733-1 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? t i me of peak reflow temperature 10 seconds or less ? t i me of temperature higher than 220 c 60 seconds or less ? t i me to preheat temperature from 120 to 180 c 120 30 s ? number of reflow s t h ree ? f l ux rosin flux containing small amount of chlorine (t he flux w i th a maximum chlorine content of 0.2 w t % is recommended.) 12030 s (preheating) 220?c 180?c package surface temperature t (?c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260?c max. 120?c (2) wav e soldering ? t e mperature 260 c or below (molten solder temperature) ? t i me 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allow ed to be dipped in solder including plastic mold portion.) ? f l ux rosin flux containing small amount of chlorine (t he flux w i th a maximum chlorine content of 0.2 w t % is recommended.) (3 ) ca utions ? f l uxes avoid removing the residual flux w i th freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aw are that w hen voltage is applied suddenly bet w een the photocoupler?s i nput and output or betw een collector-emitters at startup, the out put side may enter the on st ate, even if the voltage is w i thin the absolute max i mum ratings. data sheet pn10248ej01v0ds 8
ps2732-1,ps2733-1 usage cautions 1. protect against static electricity w hen handling. 2. avoid storage at a high te mperature and high humidity . data sheet pn10248ej01v0ds 9
ps2732-1,ps2733-1 specification of vde marks license document (vde0884) p a r a m e t e r s y m b o l s p e c k u n i t application classification (din vde 0109) for rated line voltages 150 vr.m.s. iv for rated line voltages 300 vr.m.s. iii climatic test class (din iec 68 teil 1/09.80) 55/100/21 dielectric strength maximum operating isolation voltage u io rm 7 1 0 v peak test voltage (partial discharge test, procedure a for ty pe test and random test) u pr 8 5 0 v peak u pr = 1.2 u io rm , p d < 5 pc test voltage (partial discharge tes t, procedure b for all devices test) u pr = 1.6 u io rm , p d < 5 pc u pr 1 1 4 0 v peak highest permissible overvoltage u tr 4 0 0 0 v peak degree of pollution (din vde 0109) 2 clearance distance > 5 mm creepage distance > 5 mm comparative tracking index (din iec 112/vde 0303 part 1) cti 175 material group (din vde 0109) iii a storage temperature range t st g ?55 to +150 c operating temperature range t a ?55 to +100 c isolation resistance, minimum value v io = 500 v dc at t a = 25 c r i s m i n . 10 12 ? v io = 500 v dc at t a max. at least 100 c r i s m i n . 10 11 ? safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) package temperature tsi 150 c current (input current i f , psi = 0) isi 300 ma pow e r (output or total pow er dissipation) psi 500 mw isolation resistance v io = 500 v dc at t a = 175 c (tsi) ris min. 10 9 ? data sheet pn10248ej01v0ds 10
4590 p a t r ick hen r y drive san t a c l ara, ca 9505 4- 181 7 teleph o n e : ( 408) 919- 25 00 facsim ile: ( 408 ) 988- 027 9 subject: compliance with eu dire ctives cel certifies, to its kno w ledge, that semicondu ctor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electron ic equipment (rohs) an d the requir e ments of eu directive 2003/11/ec restriction o n penta and octa bde. cel pb-free products ha ve the same base part n u mber with a suffix added. the suffix ?a indicates that the device is pb-fre e. the ?az suffix is use d to designa te devices containing pb which are exempted from the requirement of ro hs directive (*). in all cases the de vices have pb-free terminals. all devices with these suffixes meet the require ments of the rohs directive. this statu s is based on cel?s understanding of t he eu directives and kn owledge of the materials that go into its pr oducts as of the date of disclo s ure o f this inform ation. re st rict e d s u bst a n c e per rohs con c e n tratio n limit per rohs (value s are n o t yet fixed) con c e n tratio n contai ned in cel devices - a - a z lead (p b) < 100 0 ppm not dete cted (*) mercury < 100 0 ppm not dete cted cadmi u m < 100 ppm not dete cted hexavale nt chromi um < 100 0 ppm not dete cted pbb < 1000 ppm not detec t ed pbde < 1000 ppm not detec t ed if you should have any additional q uestions reg a rding our d e vices and compliance t o environme n tal standards, p l ease do not hesitate to contact your local representative. important inf o rm ation and disclaimer: infor m ation provided b y cel on its w ebsite or in other communi cations concertin g the subs tance content of its pro ducts represents know ledge and b e lief as of t he date that it is provided. cel bases its know ledge a n d belief on informa t ion provided b y t h ird parties and make s no representa t ion or w a rran t y a s to the accurac y of such information. efforts are u nder w a y to b e tte r integrate informa t ion from third pa rties. cel has ta ken and cont inue s to take reasona ble steps to provide repr esentative and ac cur a te information but ma y not h a ve conducted destructive testing or chemical analy s is on incoming ma terials and chemicals. cel and ce l suppliers consid er certain inform ation to be pro p ri etar y , and thus c as numbers and other limited information ma y not be availab le for release. in no event shall cel?s liability ari s ing out of such information e x cee d the total purch ase price of the cel part ( s) at issue s old by cel to customer on an annual basis. see cel te rms and conditions f o r additional cl arification of w a rran t ies and liability .

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